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| Silicon Junction FETs (Small Signal) 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 s Features q Low ON-resistance q Low-noise characteristics unit: mm 4.00.2 3.00.2 0.70.1 s Absolute Maximum Ratings (Ta = 25C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings -65 20 10 300 150 -55 to +150 Unit V mA mA mW C C 1.27 1.27 1 2 3 2.00.2 marking +0.2 0.45-0.1 2.540.15 1: Source 2: Gate 3: Drain EIAJ: SC-72 New S Type Package s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Coss Conditions VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 IG = -10A, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz 1.8 -65 -1.5 2.5 250 7 1.3 1.5 -3.5 min 0.2 typ max 6 -10 Unit mA nA V V mS pF pF pF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) O 0.2 to 1 P 0.6 to 1.5 Q 1 to 3 R 2.5 to 6 15.60.5 1 Silicon Junction FETs (Small Signal) PD Ta 400 2.5 Ta=25C 350 2.0 2.0 VGS=0V 1.5 - 0.1V - 0.2V 1.0 - 0.3V - 0.4V 0.5 50 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0 -1.2 2SK1104 ID VDS 2.5 ID VGS Allowable power dissipation PD (mW) Drain current ID (mA) Drain current ID (mA) 300 250 200 150 100 Ta=-25C 1.5 25C 1.0 75C 0.5 -1.0 - 0.8 - 0.6 - 0.4 - 0.2 0 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | VGS 5 2.5 VDS=10V Ta=25C 4 | Yfs | ID Forward transfer admittance |Yfs| (mS) VDS=10V Ta=25C Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10 VGS=0 f=1MHz Ta=25C 8 Forward transfer admittance |Yfs| (mS) 2.0 IDSS=10mA 1.5 3 IDSS=10mA 2 6 Ciss 1.0 4 1 0.5 2 Coss Crss 0 -1.6 0 -1.2 - 0.8 - 0.4 0 0 1 2 3 4 5 6 7 8 0 1 3 10 30 100 Gate to source voltage VGS (V) Drain current ID (mA) Drain to source voltage VDS (V) 2 |
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